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| NTGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features * * * * Leading Edge Trench Technology for Low On Resistance Low Gate Charge for Fast Switching Small Size (3 x 2.75 mm) TSOP-6 Package This is a Pb-Free Device http://onsemi.com V(BR)DSS 20 V 32 mW @ 2.5 V 4.9 A RDS(on) mAX 24 mW @ 4.5 V ID Max 5.6 A Applications * DC-DC Converters * Lithium Ion Battery Applications * Load/Power Switching MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t 10 s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State t 10 s TA = 25C Steady State TA = 85C TA = 25C tP 10 s ID PD IDM TJ, Tstg IS TL TA = 25C TA = 85C TA = 25C TA = 25C PD 1.4 4.2 3.0 0.6 19 -55 to 150 1.0 260 A ID Symbol VDSS VGS Value 20 8 5.6 4.1 6.2 1.1 W A Unit V V N-Channel Drain 1 2 5 6 Gate 3 Source 4 MARKING DIAGRAM & PIN ASSIGNMENT Drain Drain Source 654 1 S9 M G G 123 Drain Drain Gate S9 M G = Specific Device Code = Date Code* = Pb-Free Package W A C A C TSOP-6 CASE 318G STYLE 1 Operating and Storage Temperature Range Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) RqJA Symbol Max 110 90 200 C/W Unit (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTGS3130NT1G Package TSOP-6 (Pb-Free) Shipping 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 1 May, 2007 - Rev. 0 Publication Order Number: NTGS3130N/D NTGS3130N ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Temperature Coefficient Drain-to-Source On-Resistance Forward Transconductance CHARGES, CAPACITANCE, & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge CISS COSS CRSS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD VGS = 4.5 V VDS = 5.0 V ID = 6.2 A VGS = 4.5 V VDS = 16 V ID = 5.6 A VGS = 0 V, f = 1 MHz, VDS = 16 V VGS = 0 V, f = 1 MHz, VDS = 10 V 935 169 104 965 198 110 13.2 0.60 1.5 4.2 11.8 0.6 1.4 2.7 18.0 nC 20.3 pF VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = 4.5 V, ID = 5.6 A VGS = 2.5 V, ID = 4.9 A VDS = 10 V, ID = 5.6 A VGS = VDS, ID = 250 mA 0.4 0.6 3.4 19 25 8.2 24 32 mW S 1.4 V mV/C V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V; VDS = 16 V, TJ = 25C VDS = 0, VGS = 8 V VGS = 0 V; ID = 250 mA 20 9.8 1.0 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 Vdc, dISD/dt = 100 A/ms, IS = 1.0 A VGS = 0 V, IS = 1.0 A TJ = 25C 0.7 20.4 8.1 11.6 8.8 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 16 V, ID = 1 A, RG = 3 W 6.3 7.3 21.7 9.7 12.6 13.5 35.1 17.6 ns 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 NTGS3130N TYPICAL CHARACTERISTICS 20 16 VGS = 4.5 V to 2.5 V ID, DRAIN CURRENT (A) 2.0 V 1.8 V 25 20 VDS 5 V ID, DRAIN CURRENT (A) 12 15 8 1.5 V 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ = 25C 4.5 5 5.5 6 10 TJ = 125C TJ = 25C TJ = -55C 0.75 1.0 1.25 1.5 1.75 2.0 2.25 5 0 0.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-T O-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.10 ID = 5.6 A 0.08 0.10 Figure 2. Transfer Characteristics TJ = 25C 0.08 VGS = 1.8 V VGS = 2 V 0.04 VGS = 2.5 V 0.02 3V 0.00 2 4 6 8 10 12 14 VGS = 4.5 V 16 18 20 0.06 TJ = 125C 0.04 TJ = 25C 0.06 0.02 0 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.04 1400 1200 C, CAPACITANCE (pF) 1000 800 600 400 200 0.01 -50 0 -25 0 25 50 75 100 125 150 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 25C f = 1 MHz Ciss 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V Coss Crss 0 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) DRAIN-T O-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTGS3130N TYPICAL CHARACTERISTICS 6 V GS, GATE-T O-SOURCE VOLTAGE (V) QT 5 4 VDS = 5 V 3 QGS 2 1 0 0 QGD VDS = 16 V 8 6 4 ID = 5.6 A TJ = 25C 2 4 6 8 10 12 14 QG, TOTAL GATE CHARGE (nC) 2 0 VDS VGS 18 16 14 12 10 V DS , DRAIN-TO-SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 10 VGS = 0 V 125C 1.0 25C 0.1 0.2 TJ = -55C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 7. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 100 5 4 10 100 ms POWER (W) 1 ms 1 VGS = 8 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 10 ms 3 Figure 8. Diode Forward Voltage vs. Current ID, DRAIN CURRENT (A) SINGLE PULSE RqJA = 110C/W TA = 25C 2 0.1 dc 1 0.01 0 100 0 1 10 SINGLE PULSE TIME (s) 100 1000 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9. Maximum Rated Forward Biased Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 RqJA, EFFECTIVE TRANSIENT THERMAL RESISTANCE NORMALIZED D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 1 10 100 1000 Figure 11. Thermal Response http://onsemi.com 4 NTGS3130N PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 6 5 1 2 4 HE E 3 b e q 0.05 (0.002) A1 A L c STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTGS3130N/D |
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